Download PDF by Heimo Uhrmann: Analog Filters in Nanometer CMOS

By Heimo Uhrmann

ISBN-10: 3642380123

ISBN-13: 9783642380129

ISBN-10: 3642380131

ISBN-13: 9783642380136

Starting from the fundamentals of analog filters and the negative transistor features in nanometer CMOS 10 high-performance analog filters built via the authors in one hundred twenty nm and sixty five nm CMOS are defined largely. between them are gm-C filters, current-mode filters, and lively filters for system-on-chip recognition for Bluetooth, WCDMA, UWB, DVB-H, and LTE functions. For the energetic filters numerous operational amplifier designs are defined. The e-book, additionally, incorporates a evaluate of the latest country of analysis on low-voltage low-power analog filters. to hide the subject of the publication comprehensively, linearization concerns and dimension tools for the characterization of complicated analog filters are brought furthermore. a number of intricate illustrations advertise a simple comprehension. This ebook might be of price to engineers and researchers in in addition to scientists and Ph.D scholars at universities. The e-book can also be recommendable to graduate scholars specializing on nanoelectronics, microelectronics or circuit engineering.

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In Fig. 21 the amplitude frequency response of the filter for the constellation with the same gain and different quality factors is shown. 6 Implemented Circuits 55 Fig. 21 AC-transfer characteristics for different quality factors Fig. 4 Measured harmonics for an output voltage of 400 mVpp f HD [dB] max. gain HD [dB] min. 58 dB and the −3 dB cut-off frequency is between 235 MHz and 285 MHz. The gain of the filter is varied by 5 dB in 4 steps in measurement (see Fig. 22), whereby the phase responses of these four filter characteristics are identical.

Cross-sections of the transistors are depicted in Figs. 7(b). Active devices are separated by a shallow trench isolation (STI). Stress engineered devices are offered and the stress is caused by the location and the dimension of the STI. Mechanical stress increases the carrier mobility in p-channel MOSFETs and deteriorates the carrier mobility in n-channel MOSFETs [79]. 22 3 CMOS Technology Fig. 32 V. The technology cross section of the 65 nm CMOS process is shown in Fig. 8. It should be noted that the aspect ratios are not displayed correctly.

The IIP3 (input intercept point) is the IP3 referred to the input, the OIP3 (output intercept point) is referred to the output. 5) The advantage of FOM 3 is that it finally depends on fC but it should be noticed that it decreases with P 2 . Especially for low-passes with a high quality factor or for bandpasses, a FOM is defined by[29] N · SFDR · fC · Q P where Q is the quality factor of the filter. 3 State-of-the-Art There is a large amount of publications on filters in micrometer and submicrometer CMOS and BiCMOS [21, 22, 31–84, 90].

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Analog Filters in Nanometer CMOS by Heimo Uhrmann


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